Innosonix Micro Maxx

Product Description

Power Stage:

• Half-Bridge GaN amplifier (Gallium nitride)

Output Power (EIAJ Test Standard 1kHz 1% THD)

• 4Ω      8Ω        8Ω Bridge-Mode
• 120W  120W    240W

Max output Voltage:

• 50 Vpeak
• 100 Vpeak

Max output Current Limited:

• 10 Apeak

Emergency Shutdown Current:

• 15 Apeak

DC Offset:  

• <25mV

Frequency response:

• 10Hz-20kHz / 4-8Ω: +0.0 -1dB

S/N typ:

• 108dBA

Analog Gain:

• Software Adjustable, 0dBFS on any Input Interface: 20Vp – 60Vp(default: 50Vp)

THD+N @ 4Ω:

• 1W            10W
• < 0.05%    < 0.1%

SMPTE IMD:

• < 0.1%

CCIF IMD:

• < 0.1%

Output impedance:

• typ 40 mΩ

Crosstalk:

• channel enabled          channel disabled
• typ < 70dB    typ 90dB (distant channels)     typ < 120dB

Protection:

• Overtemperature, DC and Overcurrent