Technical Specifications

Description

Power Stage:

  • Half-Bridge GaN amplifier (Gallium nitride)

Output Power (EIAJ Test Standard 1kHz 1% THD)

  • 4Ω 8Ω 8Ω Bridge-Mode
  • 120W 120W 240W

Max output Voltage:

  • 50 Vpeak
  • 100 Vpeak

Max output Current Limited:

  • 10 Apeak

Emergency Shutdown Current:

  • 15 Apeak

DC Offset:

  • <25mV

Frequency response:

  • 10Hz-20kHz / 4-8Ω: +0.0 -1dB

S/N typ:

  • 108dBA

Analog Gain:

  • Software Adjustable, 0dBFS on any Input Interface: 20Vp - 60Vp(default: 50Vp)

THD+N @ 4Ω:

  • 1W 10W
  • < 0.05% < 0.1%

SMPTE IMD:

  • < 0.1%

CCIF IMD:

  • < 0.1%

Output impedance:

  • typ 40 mΩ

Crosstalk:

  • channel enabled channel disabled
  • typ < 70dB typ 90dB (distant channels) typ < 120dB

Protection:

  • Overtemperature, DC and Overcurrent